
Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, together with Infineon Technologies, a world leader in semiconductor, microelectronics and IoT solutions, have announced the expansion of their HYPERRAM™ product collaboration with the new higher bandwidth HYPERRAM™ 3.0.
The HYPERRAM product range offers compact alternatives to traditional pseudo-SRAM and is well-suited to low power, space-constrained IoT applications that require an off-chip external RAM. HYPERRAM 3.0 operates at a maximum frequency of 200MHz with a 1.8V operation voltage, which is the same as both HYPERRAM 2.0 and OCTAL xSPI RAM, but with an increased data-transfer rate of 800MBps – double the rate that was previously available. The new generation HYPERRAM operates via an expanded IO HyperBus™ interface with 22 pins.
"As a leading provider of memory solutions, Infineon provides a family of solutions that deliver high performance in smaller form factors for next-generation IoT applications," said Ramesh Chettuvetty, Sr. Director of Marketing and Applications at Infineon Technologies. "HYPERRAM™ 3.0 is the third generation of the HYPERRAM™ family that supports throughput of up to 800MBps using a new 16-bit extended version of the HyperBus™ interface. The 256Mb HYPERRAM™ 3.0 devices are now sampling. Infineon Technologies is pleased to collaborate with Winbond to enable broader adoption of this new memory technology."
"Low pin count, low power consumption and easy control are three key features of HYPERRAM™ that help it significantly improve the performance of IoT end devices," says Winbond. "HYPERRAM™ significantly simplifies the PCB layout design, extends mobile devices' battery life, and works with a smaller processer via a lower pin count while increasing throughput compared to low-power DRAM, SDRAM, and CRAM/PSRAM," Winbond added.
New IoT devices execute more than simple machine to machine communication - they perform voice control or tinyML inferences and therefore need a higher memory performance. The HYPERRAM family is ideal for low-power IoT applications, such as wearables, instrument clusters in automotive applications, infotainment and telematics systems, industrial machine vision, HMI displays and communication modules. HYPERRAM 3.0 is the new generation able to operate under the same command/address signal and similar data bus format with enhanced bandwidth and the same standby power with little pin change. The first member of the HYPERRAM 3.0 family will be a 256Mb device in a KGD, WLCSP Package, which can be implemented at the component level, module level or PCB level based on the end product type.
HYPERRAM technology
HYPERRAM is a high-speed, low-pin-count, low-power pseudo-SRAM for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Introduced by Infineon (then Cypress) in 2015, HYPERRAM now enjoys mature and broad ecosystem support from leading MCU, MPU and FPGA chipset partners and customers. Its low-pin count architecture makes HYPERRAM especially suitable for power and board space-constrained applications requiring off-chip external RAM. Optimised HyperBus memory controllers are available from multiple third-party IP vendors.
About Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon are the key to a better future. With around 50,280 employees worldwide, Infineon generated revenue of about €11.1 billion in the 2021 fiscal year (ending 30 September).
Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Further information is available at www.infineon.com.
About Winbond
Winbond Electronics Corporation is a total memory solution provider. The Company provides customer-driven memory solutions backed by the expert capabilities of product design, R&D, manufacturing, and sales services. Winbond’s product portfolio, consisting of Specialty DRAM, Mobile DRAM, Code Storage Flash, and TrustME® Secure Flash, is widely used by tier-1 customers in communication, consumer electronics, automotive and industrial, and computer peripheral markets. Winbond is headquartered in Central Taiwan Science Park (CTSP), and it has subsidiaries in the USA, Japan, Israel, China and Hong Kong, and Germany. Based on Taichung and new Kaohsiung 12-inch fabs in Taiwan, Winbond keeps pace to develop in-house technologies to provide high-quality memory IC products.
All registered trademarks and other trademarks belong to their respective owners. For more details, please visit Winbond official site.
- IC FLASH 64MBIT SPI/QUAD 8SOIC
- IC FLASH 16MBIT SPI/QUAD 8SOIC
- IC SDRAM 1GB X8 933MHZ 78WBGA
- IC DRAM 2GBIT PARALLEL 96VFBGA
- IC FLASH 4MBIT SPI 104MHZ 8WSON
- IC DRAM 2GBIT PARALLEL 96VFBGA
- IC FLSH 256MBIT PARALLEL 64LFBGA
- IC FLASH 64MBIT PARALLEL 48TSOP
- IC DRAM 2GBIT PARALLEL 96VFBGA
- IC DRAM 256MBIT PARALLEL 60TFBGA
- IC FLASH 8MBIT SPI 104MHZ 8WSON
- IC FLASH 128MBIT SPI/QUAD 8WSON
- Winbond was the first Flash memory manufacturer to introduce a 1.2V SPI NOR Flash device
- Winbond announced the expansion of their HYPERRAM™ product collaboration with the new higher bandwid
- Winbond Electronics announced key enhancements to its DDR3 product on the ultra-high-speed performan
- Winbond announced TrustME® W77Q Secure Flash had obtained Security Evaluation Standard
- Winbond announced 100BGA LPDDR4/4X had achieved the JEDEC JED209-4 standard to ensure energy conserv
- Winbond Electronics announced that they had received the ISO/SAE 21434 certification from TÜV NORD
- Winbond Electronics announced that its Flash Memory products will now support the low temperature so
- Winbond TrustME® W77Q wins OFweek China IoT Innovative Product Awards 2022
- Winbond HYPERRAM™ 3.0 wins 7th China IoT Innovation Awards 2022
- Winbond has joined the UCIe (Universal Chiplet Interconnect Express) Consortium
- Winbond announced the introduction of new HyperRAM™ products with WLCSP
- Winbond has come up with the first low density 512Mb DDR3/3L SDRAM appeared on the market
