

Winbond HyperRAM™
Winbond HyperRAM™ products provide a compact alternative to traditional pseudo-SRAM in IoT and consumer devices, automotive and industrial equipment. The introduction in 2021 of HyperRAM™ devices produced on Winbond’s 25nm process extends densities up to 256Mb and 512Mb.
Ultra-low Power Consumption:
Winbond’s Hybrid Sleep Mode (HSM) gives standby power consumption as low as 45μW, and operating power less than half that of equivalent pSRAM products.
Design Simplicity:
HyperRAM™ devices use just 13 signal pins, compared to 31 signal pins in pSRAM. This makes the board layout much simpler to design and manufacture.
Space-saving:
Low pin-count packages and a lower number of connections to the host controller reduce the memory system’s board footprint and save space in consumer devices such as smart watches.
Winbond Electronics Corporation is a leading supplier of semiconductor solutions to the consumer, computer, communications, and electronics product markets. Winbond developed the mobile DRAM devices with a low IDD current value, which helps Winbond to extend mobile DRAM memory applications beyond the mobile phone and tablet market to areas of mobile consumer electronics and mobile communication. Winbond mobile DRAM devices support both x16 and x32 data widths. Major features for the families of products shown in the table below include the following: Sequential or Interleave burst、High Clock rate、Standard Self Refresh、Partial-Array Self Refresh (PASR)、Automatic Temperature Compensated Self Refresh Rate(ATCSR)、Deep Power-Down (DPD)、and Programmable output buffer driver strength. They are ideal for portable multimedia players, wearable devices, automotive applications, consumer electronics, gaming devices, and mobile devices.
Do you know more about Winbond's product uses, technical documents, and solutions related to HyperRAM™? Then quickly get in touch with Winbond Distributor - NHE!
- IC FLASH 16MBIT SPI/QUAD 8SOIC
- IC DRAM 256MBIT PARALLEL 54VFBGA
- 1G-BIT SERIAL NAND FLASH, 1.8V
- IC FLSH 256MBIT SPI/QUAD 24TFBGA
- IC DRAM 1GBIT PARALLEL 96WBGA
- IC FLASH 256MBIT SPI/QUAD 16SOIC
- IC DRAM 256MBIT PARALLEL 84WBGA
- IC FLSH 32MBIT SPI 104MHZ 16SOIC
- IC FLASH 64MBIT SPI 24TFBGA
- IC SDRAM 1GB X8 1066MHZ 78WBGA
- IC FLASH
- IC FLASH 256MBIT SPI/QUAD 16SOIC
- Winbond announced that it is bringing the power-saving benefits of its 1.2V W25Q-ND series of SpiFla
- Winbond announced it is now the top supplier of all NOR Flash memories worldwide
- Winbond announced the introduction of the new single die monolithic 1.8V 512Mb SPI NOR flash
- Winbond announced TrustME® W77Q Secure Flash has obtained Common Criteria EAL2 and ISO 26262 ASIL-C
- Winbond announced SpiStack® memory provides unique benefits when implementing Over-the-Air (OTA) up
- Winbond was the first Flash memory manufacturer to introduce a 1.2V SPI NOR Flash device
- Winbond announced the expansion of their HYPERRAM™ product collaboration with the new higher bandwid
- Winbond Electronics announced key enhancements to its DDR3 product on the ultra-high-speed performan
- Winbond announced TrustME® W77Q Secure Flash had obtained Security Evaluation Standard
- Winbond announced 100BGA LPDDR4/4X had achieved the JEDEC JED209-4 standard to ensure energy conserv
- Winbond Electronics announced that they had received the ISO/SAE 21434 certification from TÜV NORD
- Winbond Electronics announced that its Flash Memory products will now support the low temperature so
